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APT30M60J
600V, 30A, 0.16 Max
N-Channel MOSFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
S G D
S
SO
2 T-
27
ISOTOP (R)
"UL Recognized"
file # E145592
APT30M60J
G
D
Single die MOSFET
S
FEATURES
* Fast switching with low EMI/RFI * Low RDS(on) * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant
TYPICAL APPLICATIONS
* PFC and other boost converter * Buck converter * Two switch forward (asymmetrical bridge) * Single switch forward * Flyback * Inverters
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 30 19 160 30 1200 21
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG VIsolation WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight -55 2500 1.03 29.2 10 1.1 0.15 150 C V
2-2007 050-8078 Rev A
Min
Typ
Max 356 0.35
Unit W C/W
oz g in*lbf N*m
Torque
Terminals and Mounting Screws. Microsemi Website - http://www.microsemi.com
Static Characteristics
Symbol
VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS
TJ = 25C unless otherwise specified
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 21A VGS = VDS, ID = 2.5mA VDS = 600V VGS = 0V TJ = 25C TJ = 125C
APT30M60J
Typ 0.57 0.14 4 -10 Max Unit V V/C V mV/C A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 600
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
3
0.16 5 100 500 100
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ = 25C unless otherwise specified
Test Conditions
VDS = 50V, ID = 21A VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 42 5890 90 800 420
Max
Unit S
pF
5
VGS = 0V, VDS = 0V to 400V
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 21A, VDS = 300V Resistive Switching VDD = 400V, ID = 21A RG = 4.7 6 , VGG = 15V
220 215 45 90 48 55 145 44 nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 100
Unit A
G S
200 1 700 15.2 8 V ns C V/ns
ISD = 21A, TJ = 25C, VGS = 0V ISD = 21A 3 diSD/dt = 100A/s, TJ = 25C ISD 21A, di/dt 1000A/s, VDD = 400V, TJ = 125C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 5.44mH, RG = 4.7, IAS = 21A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.32E-8/VDS^2 + 3.49E-8/VDS + 1.30E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-8078
Rev A
2-2007
160 140 ID, DRAIN CURRENT (A) 120 100 80 60 40 20 0
V
GS
= 10V
70
TJ = -55C
APT30M60J
T = 125C
J
V
GS
= 7&8V
60 ID, DRIAN CURRENT (A) 50 40 30 20 10 0 0
5.5V 6V
TJ = 25C
TJ = 150C
TJ = 125C
5V 4.5V
30 25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics
NORMALIZED TO VGS = 10V @ 21A
30 25 20 15 10 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
3.0 2.5 2.0 1.5 1.0 0.5
160 140 ID, DRAIN CURRENT (A) 120 100 80 60 40 20 0 0
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
TJ = -55C TJ = 25C TJ = 125C
0 25 50 75 100 125 150 0 -55 -25 TJ, JUNCTION TEMPERATURE (C) Figure 3, RDS(ON) vs Junction Temperature 80 70
10 8 6 4 2 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics
Ciss
20,000 10,000
TJ = -55C TJ = 25C TJ = 125C
gfs, TRANSCONDUCTANCE
50 40 30 20 10 0 0
C, CAPACITANCE (pF)
60
1000
Coss
100 Crss 10
40 30 20 10 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current
ID = 21A
50
600 500 400 300 200 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 0 100 ISD, REVERSE DRAIN CURRENT (A) 90 80 70 60 50 40 30 20 10 0 0
TJ = 150C
16 VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12 10 8 6 4 2
VDS = 120V
VDS = 300V
TJ = 25C
050-8078
300 250 200 150 100 50 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0
0
1.2 1.0 0.8 0.6 0.4 0.2 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
Rev A
2-2007
VDS = 480V
200 100
I
DM
200 100
I
DM
APT30M60J
ID, DRAIN CURRENT (A)
10
ID, DRAIN CURRENT (A)
13s 100s 1ms
Rds(on)
10
13s
10ms
100ms
Rds(on)
1
1
TJ = 150C TC = 25C
100s 1ms 10ms 100ms DC line
DC line
0.1
TJ = 125C TC = 75C
Scaling for Different Case & Junction Temperatures: ID = ID(T = 25C)*(TJ - TC)/125
1
800 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area
0.1
C
800 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 1
TJ (C)
0.105 Dissipated Power (Watts) 0.0185 0.360
TC (C)
0.244 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
Figure 11, Transient Thermal Impedance Model 0.40 ZJC, THERMAL IMPEDANCE (C/W) 0.35
D = 0.9
0.30 0.25 0.20 0.15 0.10 0.05 0 10
-5
0.7
ZEXT
0.5
Note:
PDM
t1 t2
0.3 0.1 0.05
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t1 = Pulse Duration
t
10-1 10-2 10-3 RECTANGULAR PULSE DURATION (seconds) Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 10
-4
1.0
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322)
W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)
2-2007
14.9 (.587) 15.1 (.594)
* Source
Drain
* Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal.
30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
Rev A
* Source Dimensions in Millimeters and (Inches)
Gate
050-8078
ISOTOP(R) is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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